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PDF | La solution solide Ga1-xInxAs ySb1-y a été cristallisée par la technique d’ épitaxie en phase liquide sur substrat GaSb orienté () et ()B dans la. Procédé d’épitaxie dans lequel le corps à partir duquel est formée la couche épitaxiale est amené à l’état liquide en contact avec le substrat à épitaxier. Resume: Un diagramme de phase precis dans la region riche en indium du systeme ternaire Ga-In-Sb a ete etabli. Les points du liquidus ont ete obtenus par .

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En ajustant certains parametres thermodynamiques, l’accord obtenu avec les points experimentaux est excellent cote indium du diagramme ternaire. The differences in film texture were correlated to the differences in growth conditions, while the differences in the film properties were correlated to the film oxygen composition.

Key words crystal growth from melt — epitaxial growth — gallium compounds — III V semiconductors — indium antimonide — phase diagrams — semiconductor growth — phase diagram — liquid phase epitaxial growth — Ga sub x In sub 1 x Sb — liquidus data — In rich liqkide — DTA measurements — solidus data — regular solution model — liquidus isotherms — thermodynamical parameters — InSb substrates — homogeneity — liqulde characteristics — electrical measurements — concentration measurement — to degrees C.

One of the main limitations to a mass market development of nanostructure based devices is the integration at a moderate cost of nano-objects into smart architectures. The process consists in first growing a graphene layers film on the C-face of 4H-SiC by confinement-controlled sublimation of silicon carbide.

Here we develop a general approach by adapting the seed-mediated solution phase synthesis of nanocrystals in order to directly grow them on crystalline thin films. Relaxation times which are needed to reach steady-state conditions with respect to the concentration difference between the growing and solving interface in the case of a start or sudden stop of the heater motion can be obtained.


Services Articles citing this article CrossRef By using a high temperature solution method, the so-called “flux method”, and by choosing an appropriate chemical composition of the flux solution, we obtained periodically domain-structured KTP layers with thicknesses up to mu m and regular periodicity onto and over bar faces of the initial PPKTP seeds.

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Diagramme de phases et croissance par epitaxie en phase liquide du gaxin1-xsb

Amorphous, polycrystalline or epitaxial gallium oxide films can be obtained depending upon the oxygen pressure during the growth in the C temperature range. The sublimated species are condensed on mica substrate at 1C.

These results have given us access experimentally to two values predicted theoretically: Effects of substrate and ambient gas on epitaxial growth indium oxide thin films M. The effect of adsorbed gas on the growth of gold films on mica at epitaxial temperatures is investigated by comparing the growths on air exposed and vacuum cleaved mica surfaces. These data, added to the literature results, have permitted to get a quite complete view of the growth scenario in very off-critical phase-separating liquids.

Paris Volume 9, Number 2mars Les points du solidus resultent de la mesure de la concentration en gallium de cristaux ternaires epitaxies a partir de liquides riches en indium.

Liquidus isotherms and solidus lines were calculated using a regular solution model. With the aim of increasing the size of periodically domain-structured crystals with a controlled and regular grating period, we proposed an epitaxial growth process using seeds made of thin plates domain engineered by electric field poling.

On the other hand, using films presenting 4-fold symmetry surfaces such as Pt and Cuthe Co growth leads to slanted wires in discrete directions. The graphene film is then patterned and arrays of nanometer-wide openings are etched in graphene revealing the SiC substrate. Writing tools A collection of writing tools that cover the many facets of English and French grammar, style and usage.

The model is strengthened by SIMS phaee focused on the evolution of hydrogen during annealing and on numerical calculations. Oriented metallic nano-objects on crystalline surfaces by solution epitaxial growth.


Diagramme de phases et croissance par epitaxie en phase liquide du gaxin1-xsb

The kinetics is characterized by using a specially-dedicated furnace and by considering laser annealing. Single crystalline nanorods are grown in epitaxy on the mica surface with a growth axis along directions and plane parallel to the substrate.

Indium oxide thin films were grown by pulsed electron phade deposition method at C on c-cut sapphire and oriented LaAlO3 single crystal substrates in oxygen or argon gas. Homogeneity and other layer characteristics were examined. Article Abstract PDF 1. Glossaries and vocabularies Access Translation Bureau glossaries and vocabularies. We demonstrated this process with the ferroelectric crystal KTiOPO4 which is one of the most promising candidate materials for that purpose.

Periodically-poled ferroelectric crystals show unprecedented efficiency and properties otherwise impossible to obtain. The corresponding epitaxial relationships were determined and interpreted in the frame of the domain matching epitaxy.

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Evaporations at residual gas pressures of 3 x mm Hg are employed to make films with optical thicknesses of 10 A. Growth of oriented crystalline solid film from a liquid in contact with an underlying substrate in a heated chamber.

This approach of solution epitaxial growth combines the advantages of chemistry in solution in producing shape-controlled and monodisperse metallic nanocrystals, and of seeded growth on an ad hoc metallic film that efficiently controls orientation through epitaxy.